Lanthanum-zirconium-oxide. It is a specialized dielectric material utilized in semiconductor fabrication to insulate gate structures. Because it has a high dielectric constant, it allows manufacturers to make insulating layers physically thicker to stop electron tunneling leakage while maintaining high capacitance.
We're evaluating LZO deposition rates for the next generation of gate oxides to reduce leakage currents.
Related terms
Wafer
A highly polished slice of semiconductor material used as the foundation for fabricating integrated circuits.
MOSFET
A metal-oxide-semiconductor field-effect transistor is a voltage-controlled switch used to amplify or switch electronic signals.
Doped
Describes a pure semiconductor material that has been intentionally infused with impurities to alter its electrical properties.