Metalorganic chemical vapor deposition is an epitaxial growth process used to deposit thin layers of atoms onto a semiconductor wafer. It works by injecting organometallic precursor gases into a heated reaction chamber, where they decompose and leave behind a highly pure crystalline film. This method is heavily used to manufacture LEDs, lasers, and high-electron-mobility transistors where precise control of layer thickness and composition is required.
We need to calibrate the MOCVD reactor before running the next batch of gallium nitride wafers.
MOCVD and MOVPE (metalorganic vapor-phase epitaxy) usually refer to the exact same process, with the choice of term depending largely on the specific lab or region.