Metalorganic vapor-phase epitaxy is a crystal growth technique that builds semiconductor layers on a substrate one atom at a time. It uses highly pure metalorganic compounds and hydrides as precursor gases, reacting them in a heated chamber to form precise crystalline structures. This process is essential for manufacturing compound semiconductors like gallium arsenide or indium phosphide, commonly used in LEDs, lasers, and high-frequency RF devices.
Heard on the job
We need to recalibrate the MOVPE reactor temperatures before we start the next batch of blue LEDs.
Also heard as
- MOCVD
- metalorganic vapor-phase epitaxy