A metal-oxide-semiconductor field-effect transistor operates by applying a voltage to an insulated gate, which creates an electric field that alters the conductivity of a channel between the source and drain terminals. Because the gate is insulated by an oxide layer, the device draws almost zero continuous gate current. This high input impedance and fast switching speed make it the dominant component in both digital logic circuits and power electronics.
The power supply failed because the main switching MOSFET shorted out and took the fuse with it.
Do not mix it up with
- IGBT: A MOSFET switches faster and is better for low-to-medium voltages, while an IGBT can handle much higher currents and voltages but switches more slowly.
Related terms
MOS
A layered structure of metal, oxide, and semiconductor materials forms the physical basis of most integrated circuits.
FET
A field-effect transistor controls the flow of electrical current using an electric field.
CMOS
Complementary metal-oxide-semiconductor is the dominant fabrication technology for integrated circuits.
IGBT
A power semiconductor device that combines a simple gate drive with high-current capability.