Multi-level cell is a flash memory technology that distinguishes between multiple voltage levels within a single floating gate transistor to store two bits of data. By having four distinct charge states, it doubles the storage density compared to single-level cells. The trade-off is slower write speeds, tighter voltage tolerances, and a reduced number of program/erase cycles before the cell degrades.
We can't use consumer MLC NAND for the automotive module because it won't survive the required write endurance specs.
Do not mix it up with
- TLC: MLC traditionally stores two bits per cell, while TLC (triple-level cell) stores three, further increasing density but reducing endurance.
Related terms
Flash memory
An electronic non-volatile computer storage medium that can be electrically erased and reprogrammed.
SSD
A solid-state drive is a storage device that uses flash memory instead of spinning magnetic platters.
TLC
Triple-level cell, a type of flash memory that stores three bits of data per memory cell.
EEPROM
Electrically erasable programmable read-only memory is a non-volatile storage chip.